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QD Laser Inc. Product Handling Comprehensive Catalog

QD Laser Product Catalog. Featuring high-performance semiconductor lasers and wafers for communication and industrial use.

The "QD Laser Inc. Product Catalog" is a catalog featuring products from QD Laser, which provides high-performance and high-quality semiconductor lasers and wafers based on GaAs substrates. By adopting quantum dot and quantum well technologies, we offer communication and industrial semiconductor lasers and wafer products through excellent crystal growth, grating formation, and device design technologies. [Featured Products] ○ 532-594nm Compact Visible Lasers ○ 640-940nm High Output Power FP Lasers ○ 1030-1180 & 1550nm DFB Lasers ○ 1240-1300nm Quantum Dot Lasers ○ Epitaxial Wafers on GaAs Substrates For more details, please contact us or download the catalog.

  • Laser Components

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Quantum Dot Laser "QLF133x/QLD133x Series"

Operates at high temperatures of 100-200℃ or higher! Ideal for plants, underground resource exploration, and as a light source for Si photonics.

The "QLF133x/QLD133x Series" is a 1300nm semiconductor laser based on quantum dot technology on GaAs. It can operate even at ultra-high temperatures of 150-200°C, making it suitable for special applications such as plants and underground resource exploration. Additionally, quantum dot lasers exhibit stable characteristics at high temperatures and excellent resistance to reflected light, making them ideal as light sources for Si photonics. We have already shipped 3.6 million units for data communication to our customers. 【Features】 ■ Quantum dots ■ FP/DFB lasers ■ Wavelength 1240-1310nm ■ Capable of high-temperature operation (above 100-200°C) ■ Excellent temperature stability ■ Excellent resistance to reflected light *For more details, please refer to the PDF document or feel free to contact us. *This PDF document is in English.

  • Laser Components

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Quantum dot laser epitaxy

Contributes to miniaturization and cost reduction of devices without the need for an isolator! Consistent support from custom prototypes of epi-wafers to mass production.

This is a 1300 nm band quantum dot laser suitable for silicon photonics. It operates stably at temperatures up to 200°C, contributing to high-density integration of optoelectronic integrated circuits. With excellent return light resistance, it eliminates the need for isolators, making it ideal for compact and low-cost devices. 【Features】 - Stable operation at up to 200°C, enabling high density with laser arrays - Excellent return light resistance (quantum dot <-130dB/Hz; quantum well <-120dB/Hz at -30dB) - High reliability in high-temperature environments (estimated lifespan > 300,000 hours at 85°C) - Customizable for wideband gain spectra according to application *For more details, please refer to the PDF document or feel free to contact us.

  • Laser Components

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Presenting the data! What is a quantum dot laser?

Successfully identified the crystal growth conditions for high-density quantum dots to realize excellent quantum dot lasers and achieved practical application.

Our quantum dots are produced using the Molecular Beam Epitaxy (MBE) method. The MBE method is a technique that grows crystals on a substrate by evaporating elemental materials from a crucible in a growth chamber maintained at ultra-high vacuum. Through years of accumulated research and development, we have deepened our understanding of crystal growth physics, allowing us to identify the crystal growth conditions for high-density quantum dots that enable the realization of excellent quantum dot lasers from various combinations of growth conditions such as growth rate and substrate temperature, successfully achieving practical application. 【Features】 ■ Stable operation in high-temperature environments and high reliability ■ Excellent return light resistance *For more details, please refer to the PDF document or feel free to contact us.

  • diode

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Quantum dot laser

It has the characteristic of small output fluctuations due to temperature, making it possible to expand into various fields! Custom manufacturing is also available.

The product is a "quantum dot laser" using a GaAs substrate. It features low output fluctuations due to temperature, making it suitable for various applications. Additionally, we accept the fabrication of compound semiconductor wafers and quantum dot wafers using MBE equipment. Custom manufacturing is also available, so please feel free to consult with us. 【Wafer Fabrication Overview】 ■ Wafer Diameter: 2 inches ■ Usable Elements: Ga, In, Al, As, Sb, Si (n-type dopant), Be (p-type dopant) ■ Structural Examples: Quantum dots with double heterostructure, etc. *For more details, please refer to the PDF document or feel free to contact us.

  • Wafer

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